Stefan Mönch

Last update: 17.7.2025

Google Scholar: https://scholar.google.de/citations?user=8NibutUAAAAJ&hl=de&oi=ao

Main-authored and last-authored publications

1. Basler, M.; Reiner, R.; Grieshaber, D.; Benkhelifa, F.; Müller, S.; Mönch, S. Highly-integrated 1200 V GaN-based Monolithic Bidirectional Switch. PCIM Europe 2025; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management [Online] 2025, 705–710.
2. Grieshaber, D.; Reiner, R.; Basler, M.; Benkhelifa, F.; Quay, R.; Moench, S. Investigation of a Single-Gate GaN HEMT as Bidirectional Switch in a Low Voltage Multilevel Topology. In PCIM Conference 2025; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2025; pp 1612–1618. DOI: 10.30420/566541211.
3. Mönch, S.; Basler, M.; Grieshaber, D.; Reiner, R.; Söllner, A.; Nour, I. B.; Quay, R.; Bartholomé, K. From Two to Seven Level GaN π-Type Converter Operation for Increased Efficiency of Capacitive-Load Charging. In 2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA); IEEE, 2024 - 2024; pp 1–5. DOI: 10.1109/WiPDA62103.2024.10773264.
4. Mönch, S.; Reiner, R.; Basler, M.; Bartholomé, K.; Waltereit, P.; Quay, R. Over 99.7% Efficient GaN-based 6-Level Capacitive-Load Power Converter. PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management [Online] 2024, 167–173.
5. Mönch, S.; Reiner, R.; Basler, M.; Mansour, K.; Grieshaber, D.; Waltereit, P.; Quay, R.; Bartholomé, K. Progress on Power Electronics for Electrocaloric Heat Pump Systems. 10th IIR Conference on Caloric Cooling and Applications of Caloric Materials (Thermag 2024) [Online] 2024.
6. Mönch, S.; Reiner, R.; Basler, M.; Waltereit, P.; Quay, R.; Bartholomé, K. Voltage-Sensorless Control and GaN Multilevel Converter for Charging Non-Linear and Lossy Electrocaloric Capacitors. CIPS 2024; 13th International Conference on Integrated Power Electronics Systems [Online] 2024, 202–207.
7. Moench, S.; Reiner, R.; Basler, M.; Grieshaber, D.; Benkhelifa, F.; Waltereit, P.; Quay, R. Three-Phase Motor Inverter and Current Sensing GaN power IC. MDPI sensors [Online] 2023, 23(14), 6512.
8. Mönch, S.; Bartholomé, K. Spatio-temporal solid-state electrocaloric effect exceeding twice the adiabatic temperature change. Journal of Physics: Energy 2023, 5 (4), 45001. DOI: 10.1088/2515-7655/aceb1b.
9. Mönch, S.; Basler, M.; Reiner, R.; Benkhelifa, F.; Döring, P.; Sinnwell, M.; Müller, S.; Mikulla, M.; Waltereit, P.; Quay, R. GaN Power Converter and High-Side IC Substrate Issues on Si, p-n Junction, or SOI. e-Prime - Advances in Electrical Engineering, Electronics and Energy [Online] 2023, 100171.
10. Mönch, S.; Kuring, C.; Geng, X.; Hoeher, P. A.; Liserre, M.; Quay, R.; Dieckerhoff, S. Efficient Talkative Power Conversion With Quasi-Square-Wave Zero-Voltage Switching Hysteretic Current Control. IEEE Trans. Power Electron. 2023, 38 (10), 12383–12387. DOI: 10.1109/TPEL.2023.3297508.
11. Mönch, S.; Reiner, R.; Basler, M.; Waltereit, P.; Quay, R. Reduced GaN Half-Bridge IC Switching Loss on Biased Si p-n Junctions. 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) [Online] 2023, 1–4.
12. Mönch, S.; Reiner, R.; Mansour, K.; Waltereit, P.; Basler, M.; Quay, R.; Molin, C.; Gebhardt, S.; Bach, D.; Binninger, R.; Bartholomé, K. A 99.74% Efficient Capacitor-Charging Converter using Partial Power Processing for Electrocalorics. IEEE Journal of Emerging and Selected Topics in Power Electronics 2023, 11 (4), 4491–4507. DOI: 10.1109/JESTPE.2023.3270375.
13. Mönch, S.; Reiner, R.; Waltereit, P.; Basler, M.; Quay, R.; Gebhardt, S.; Molin, C.; Bach, D.; Binninger, R.; Bartholomé, K. How highly efficient power electronics transfers high electrocaloric material performance to heat pump systems. MRS Advances 2023, 1–10. DOI: 10.1557/s43580-023-00670-7.
14. Moench, S.; Mansour, K.; Reiner, R.; Basler, M.; Waltereit, P.; Quay, R.; Molin, C.; Gebhardt, S.; Bach, D.; Binninger, R.; Bartholomé, K. A GaN-based DC-DC Converter with Zero Voltage Switching and Hysteretic Current Control for 99% Efficient Bidirectional Charging of Electrocaloric Capacitive Loads. PCIM Europe 2022; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management [Online] 2022.
15. Moench, S.; Meyer, J. M.; Žukauskaitė, A.; Lebedev, V.; Fichtner, S.; Su, J.; Niekiel, F.; Giese, T.; Thormählen, L.; Quandt, E.; Lofink, f. AlScN-Based SAW Magnetic Field Sensor for Isolated Closed-Loop Hysteretic Current Control of Switched-Mode Power Converters. IEEE Sensors Letters 2022, 6 (10), 1–4. DOI: 10.1109/LSENS.2022.3205853.
16. Moench, S.; Reiner, R.; Mansour, K.; Basler, M.; Waltereit, P.; Quay, R.; Bartholomé, K. GaN Power Converter Applied to Electrocaloric Heat Pump Prototype and Carnot Cycle. In 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), 2022; pp 186–191. DOI: 10.1109/WiPDA56483.2022.9955287.
17. Moench, S.; Reiner, R.; Waltereit, P.; Molin, C.; Gebhardt, S.; Bach, D.; Binninger, R.; Bartholome, K. Enhancing Electrocaloric Heat Pump Performance by Over 99% Efficient Power Converters and Offset Fields. IEEE Access 2022, 10, 46571–46588. DOI: 10.1109/ACCESS.2022.3170451.
18. Moench, S.; Reiner, R.; Waltereit, P.; Benkhelifa, F.; Hückelheim, J.; Meder, D.; Zink, M.; Kaden, T.; Noll, S.; Mansfeld, S.; Mingirulli, N.; Quay, R.; Kallfass, I. PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link Capacitors. IEEE Trans. Power Electron. 2021, 36 (1), 83–86. DOI: 10.1109/TPEL.2020.3005621.
19. Moench, S.; Müller, S.; Reiner, R.; Waltereit, P.; Czap, H.; Basler, M.; Hückelheim, J.; Kirste, L.; Kallfass, I.; Quay, R.; Ambacher, O. Monolithic Integrated AlGaN/GaN Power Converter Topologies on High-Voltage AlN/GaN Superlattice Buffer. Status Solidi A 2021, 218 (3), 2000404. DOI: 10.1002/pssa.202000404.
20. Moench, S.; Reiner, R.; Benkhelifa, F.; Basler, M.; Waltereit, P.; Quay, R. A Three-Phase GaN-on-Si Inverter IC for Low-Voltage Motor Drives. PCIM Europe digital days 2021; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management [Online] 2021, 1–7.
21. Moench, S.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; Kallfass, I. Investigation of GaN-on-Si and GaN-on-SOI Substrate Capacitances for Discrete and Monolithic Half-Bridges. 33rd IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD 2021) [Online] 2021, 335–338.
22. Mönch, S. Switching Characteristics of Integrated GaN-on-Si Half-Bridge and Driver Circuits. Dissertation; Universität Stuttgart, 2021.
23. Moench, S.; Reiner, R.; Waltereit, P.; Hückelheim, J.; Meder, D.; Quay, R.; Ambacher, O.; Kallfass, I. A 600 V GaN-on-Si Power IC with Integrated Gate Driver, Freewheeling Diode, Temperature and Current Sensors and Auxiliary Devices. In CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems (CIPS 2020): Berlin, Germany, 2020.
24. Moench, S.; Reiner, R.; Waltereit, P.; Müller, S.; Quay, R.; Ambacher, O.; Kallfass, I. A 600 V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) [Online] 2020.
25. Moench, S.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; Kallfass, I. Integrated Current Sensing in GaN Power ICs. 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) [Online] 2019.
26. Moench, S.; Reiner, R.; Waltereit, P.; Meder, D.; Basler, M.; Quay, R.; Ambacher, O.; Kallfass, I. Asymmetrical Substrate-Biasing Effects at up to 350V Operation of Symmetrical Monolithic Normally-Off GaN-on-Si Half-Bridges. 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA). 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) [Online] 2019.
27. Moench, S.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Kaden, T.; Ambacher, O.; Kallfass, I. Towards Highly-Integrated High-Voltage Multi-MHz GaN-on-Si Power ICs and Modules. In PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; VDE-Verlag Gmbh, Ed., 2018.
28. Moench, S.; Weiss, B.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; Kallfass, I. Instabilities by Parasitic Substrate-Loop of GaN-on-Si HEMTs in Half-Bridges. 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) [Online] 2018.
29. Moench, S.; Hillenbrand, P.; Hengel, P.; Kallfass, I. Pulsed measurement of sub-nanosecond 1000 V/ns switching 600 V GaN HEMTs using 1.5 GHz low-impedance voltage probe and 50 Ohm scope. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) [Online] 2017.
30. Moench, S.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.; Kallfass, I. Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) [Online] 2017.
31. Moench, S.; Salcines, C.; Li, R.; Li, Y.; Kallfass, I. Substrate potential of high-voltage GaN-on-Si HEMTs and half-bridges: Static and dynamic four-terminal characterization and modeling. 2017 IEEE 18th Workshop on Control and Modeling for Power Electronics (COMPEL) [Online] 2017.
32. Moench, S.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O. Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor. 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) [Online] 2016.
33. Moench, S.; Costa, M. S.; Barner, A.; Weimer, J.; Holz, R.; Schwindt, E.; Zehelein, M.; Roth-Stielow, J.; Kallfass, I. High thermal conductance AlN power module with hybrid integrated gate drivers and SiC trench MOSFETs for 2 kW single-phase PV inverter. In Active thermal balancing for modular multilevel converters in HVDC applications; Hahn, F., Buticchi, G., Liserre, M., Eds.; IEEE: Piscataway Township, NJ, USA, 2016; pp 1–8. DOI: 10.1109/EPE.2016.7695468.
34. Moench, S.; Costa, M.; Barner, A.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O. Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT. 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) [Online] 2015.
35. Mönch, S.; Costa, M.; Barner, A.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O. Quasi-normally-off GaN gate driver for high slew-rate d-mode GaN-on-Si HEMTs. 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) [Online] 2015.
36. Moench, S.; Merz, R.; Wurster, T.; Schubert, M. B. Dynamic String Interconnection in Single-Stage Inverter Topology. 4 pages / 27th European Photovoltaic Solar Energy Conference and Exhibition; 3626-3629 [Online] 2012.
37. Söllner, A.; Jie, C.; Mönch, S. Optimal Transistor Dimensioning in T-Type Topology for Reduced Quasi-2-Level Switching Loss. PCIM Conference 2025; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; pp 1839–1844. DOI: 10.30420/566541242.

Co-authored publications

38. Benkhelifa, F.; Leone, S.; Reiner, R.; Basler, M.; Czap, H.; Grieshaber, D.; Kirste, L.; Bernhardt, F.; Mönch, S.; Quay, R. 1700 V Breakdown Monolithic Bidirectional GaN/AlGaN MISHEMTs with a Thin Buffer Grown on SiC Substrate. International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) 2025, 2025.
39. Reiner, R.; Nambiar, A. G.; Mönch, S.; Basler, M.; Grieshaber, D.; Döring, P.; Waltereit, P.; Quay, R. Higher Order Thermal Impedance Extraction of GaN Power HEMTs by I – V Measurements. IEEE Transactions on Electron Devices 2025, 72 (4), 1650–1656. DOI: 10.1109/TED.2025.3539594.
40. Basler, M.; Reiner, R.; Mönch, S.; Grieshaber, D.; Benkhelifa, F.; Quay, R. Monolithically Integrated Two-Stage GaN Gate Drivers. In 2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe); IEEE, 2024 - 2024; pp 1–5. DOI: 10.1109/WiPDAEurope62087.2024.10797450.
41. Basler, M.; Döring, P.; Mönch, S.; Reiner, R.; Driad, R.; Mikulla, M.; Quay, R. Vertical GaN Transistor with Quasi-Monolithically Integrated HEMT Gate Driver and Sense-CAVET for Current Monitoring. In 2024 IEEE Applied Power Electronics Conference and Exposition (APEC); IEEE, 2024; pp 737–741. DOI: 10.1109/APEC48139.2024.10509173.
42. Basler, M.; Mönch, S.; Reiner, R.; Benkhelifa, F.; Quay, R. Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC–DC Converters. Electronics 2024, 13 (7), 1351. DOI: 10.3390/electronics13071351.
43. Basler, M.; Reiner, R.; Grieshaber, D.; Benkhelifa, F.; Mönch, S. Monolithically Integrated and Galvanically Isolated GaN Gate Driver. IEEE Open J. Power Electron. [Online] 2024, 1–6.
44. Döring, P.; Basler, M.; Reiner, R.; Mönch, S.; Driad, R.; Dammann, M.; Mikulla, M.; Quay, R. Towards Vertical GaN-Power ICs: Co-integration of Lateral HEMTs and Vertical Power CAVETs. In 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD); IEEE, 2024; pp 382–385. DOI: 10.1109/ISPSD59661.2024.10579561.
45. Grieshaber, D.; Reiner, R.; Michael, B.; Ruediger, Q.; Stefan, M. A three-level GaN-based gate driver with reduced loss by stepwise charging. PELSS 2024; Power Electronics Student Summit [Online] 2024, 24–28.
46. Reiner, R.; Mönch, S.; Müller, S.; Waltereit, P.; Benkhelifa, F.; Basler, M.; Mikulla, M.; Quay, R. More than 1200 V Breakdown and Low Area-Specific On State Resistances by Progress in Lateral GaN on Si and GaN on Insulator Technologies. PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management [Online] 2024, 557–563.
47. Reiner, R.; Nambiar, A. G.; Basler, M.; Mönch, S.; Waltereit, P.; Quay, R. Extraction of the Thermal Resistance and the Thermal Capacitance of GaN Power HEMTs by Using Pulsed I – V Measurements. IEEE Transactions on Electron Devices 2024, 71 (9), 5270–5274. DOI: 10.1109/TED.2024.3429462.
48. Basler, M.; Deneke, N.; Mönch, S.; Reiner, R.; Wicht, B.; Quay, R. Monolithically Integrated GaN Gate Drivers– A Design Guide. IEEE Open Journal of Power Electronics 2023, 4, 487–497. DOI: 10.1109/OJPEL.2023.3290190.
49. Basler, M.; Döring, P.; Mönch, S.; Reiner, R.; Mikulla, M.; Quay, R. Switching of GaN CAVET With Quasi-Monolithic Integrated HEMT Gate Driver. IEEE Electron Device Lett. 2023, 44 (8), 1332–1335. DOI: 10.1109/LED.2023.3290608.
50. Basler, M.; Reiner, R.; Moench, S.; Waltereit, P.; Quay, R.; Haarer, J. Compact GaN Power ICs with Power HEMT, Gate Driver, Temperature Sensor, Current Sense-FET and Amplifier. 2023 35th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) [Online] 2023, 191–194.
51. Pascal, Y.; Daschner, F.; Mönch, S.; Liserre, M.; Höft, M.; Quay, R. Online die temperature measurement using S-parameters in GaN-based power converters. Microelectronics Reliability [Online] 2023, 150, 115085. https://​www.sciencedirect.com​/​science/​article/​pii/​S0026271423001853.
52. Reiner, R.; Basler, M.; Mikulla, M. Integrated Multi-Gate Cascade Structure for Lateral High-Voltage GaN Power Transistors. PCIM Europe 2023; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management [Online] 2023.
53. Reiner, R.; Basler, M.; Moench, S.; Waltereit, P.; Benkhelifa, F.; Mikulla, M.; Quay, R. Lateral GaN Power Devices and Integrated GaN Power Circuits: Status and Recent Progress. ETG –Tagung „Bauelemente der Leistungselektronik und ihre Anwendungen 2023“
54. Schipper, J.; Bach, D.; Mönch, S.; Molin, C.; Gebhardt, S.; Wöllenstein, J.; Schäfer-Welsen, O.; Vogel, C.; Langebach, R.; Bartholomé, K. On the efficiency of caloric materials in direct comparison with exergetic grades of compressors. Journal of Physics: Energy 2023, 5 (4), 45002. DOI: 10.1088/2515-7655/ace7f4.
55. Basler, M.; Reiner, R.; Moench, S.; Waltereit, P.; Quay, R. GaN Active Rectifier Diode. IEEE Open Journal of Power Electronics 2022, 3, 876–885. DOI: 10.1109/OJPEL.2022.3222865.
56. Basler; R. Reiner; S. Moench; P. Waltereit; R. Quay. Function Blocks of a Highly-Integrated All-in-GaN Power IC for DC-DC Conversion. In 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), 2022; P.1-P.9.
57. Reiner, R.; Moench, S.; Waltereit, P.; Benkhelifa, F.; Basler, M.; Mikulla, M.; Quay, R. Design and Characterization of an Interleaved GaN Half-Bridge IC with Matrix Layout. PCIM Europe 2022; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management [Online] 2022.
58. Waltereit, P.; Reiner, R.; Moench, S.; Müller, S.; Czap, H.; Dammann, M.; Kirste, L.; Quay, R. GaN on-chip Integration: Technology & Applications; ECPE SiC & GaN User Forum: Potential of Wide Bandgap Semiconductors in Power Electronic Applications, 2021.
59. Basler, M.; Reiner, R.; Moench, S.; Benkhelifa, F.; Döring, P.; Waltereit, P.; Quay, R.; Ambacher, O. Building Blocks for GaN Power Integration. IEEE Access [Online] 2021, No. 9, 163122–163137.
60. Basler, M.; Moench, S.; Reiner, R.; Benkhelifa, F.; Weidinger, G.; Weis, G.; Quay, R.; Ambacher, O. High Power Density DC-DC Converters Using Highly Integrated Half-Bridge GaN ICs. PCIM Europe 2021; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management [Online] 2021.
61. Basler, M.; Reiner, R.; Moench, S.; Waltereit, P.; Quay, R.; Kallfass, I.; Ambacher, O. A GaN-Based Active Diode Circuit for Low-Loss Rectification. 33rd IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD 2021) [Online] 2021.
62. Meyer, J. M.; Schell, V.; Su, J.; Fichtner, S.; Yarar, E.; Niekiel, F.; Giese, T.; Kittmann, A.; Thormählen, L.; Lebedev, V.; Moench, S.; Žukauskaitė, A.; Quandt, E.; Lofink, f. Thin-Film-Based SAW Magnetic Field Sensors. Sensors (Basel, Switzerland) 2021, 21 (24). DOI: 10.3390/s21248166.
63. Reiner, R.; Lerner, R.; Waltereit, P.; Hansen, N. H.; Moench, S.; Fecioru, A. Characteristics of Hetero-Integrated GaN-HEMTs on CMOS Wafer by Micro-Transfer-Printing. 33rd IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD 2021) [Online] 2021.
64. Reiner, R.; Benkhelifa, F.; Moench, S.; Basler, M.; Waltereit, P.; Mikulla, M.; Ambacher, O. Design of Low-Resistance and Area-Efficient GaN-HEMTs for Low-Voltage Power Applications. PCIM Europe 2021; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management [Online] 2021, 1–8.
65. Basler, M.; Moench, S.; Reiner, R.; Waltereit, P.; Quay, R.; Kallfass, I.; Ambacher, O. Monolithic Integration of Inductive Components in a GaN-on-Si Technology. CIPS 2020; 11th International Conference on Integrated Power Electronics Systems. CIPS 2020; 11th International Conference on Integrated Power Electronics Systems [Online] 2020.
66. Koch; S. Moench; R. Reiner; J. Hueckelheim; K. M. Baron; P. Waltereit; I. Kallfass. Static and Dynamic Characterization of a Monolithic Integrated Temperature Sensor in a 600 V GaN Power IC. In PCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2020; pp 1–7.
67. Basler; R. Reiner; S. Moench; P. Waltereit; R. Quay; I. Kallfass; O. Ambacher. Large-Area Lateral AlGaN/GaN-on-Si Field-Effect Rectifier With Low Turn-On Voltage. IEEE Electron Device Lett. 2020, 41 (7), 993–996. DOI: 10.1109/LED.2020.2994656.
68. Basler; S. Moench; R. Reiner; P. Waltereit; R. Quay; I. Kallfass; O. Ambacher. A GaN-based Current Sense Amplifier for GaN HEMTs with Integrated Current Shunts. In 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020; pp 274–277. DOI: 10.1109/ISPSD46842.2020.9170047.
69. Reiner; T. Gerrer; B. Weiss; P. Waltereit; S. Moench; D. Meder; M. Sinnwell; M. Dammann; R. Quay; O. Ambacher. Si-Substrate Removal for AlGaN/GaN Devices on PCB Carriers. In 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020; pp 286–289. DOI: 10.1109/ISPSD46842.2020.9170078.
70. Albahrani, S. A.; Mahajan, D.; Moench, S.; Reiner, R.; Waltereit, P.; Schwantuschke, D.; Khandelwal, S. Modeling of the Impact of the Substrate Voltage on the Capacitances of GaN-on-Si HEMTs. IEEE Trans. Electron Devices [Online] 2019, 1–8.
71. Basler, M.; Moench, S.; Reiner, R.; Waltereit, P.; Quay, R.; Kallfass, I.; Ambacher, O. A GaN-on-Si-Based Logic, Driver and DC-DC Converter Circuit with Closed-Loop Peak Current-Mode Control. PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management [Online] 2019.
72. Basler; S. Moench; R. Reiner; P. Waltereit; R. Quay; I. Kallfass; O. Ambacher. A Pseudo-Complementary GaN-Based Gate Driver with Reduced Static Losses. In 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2019; pp 93–98. DOI: 10.1109/WiPDA46397.2019.8998895.
73. Reiner; V. Zuerbig; L. Pinti; P. Reinke; D. Meder; S. Moench; F. Benkhelifa; R. Quay; V. Cimalla; C. Nebel; O. Ambacher. Diamond Schottky-Diode in a Non-Isolated Buck Converter. In PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2019; pp 1–5.
74. Reiner, R.; Waltereit, P.; Moench, S.; Weiss, B.; Meder, D.; Basler, M.; Benkhelifa, F.; Müller, S.; Dammann, M.; Mikulla, M.; Quay, R.; Ambacher, O. Opportunities and Challenges of Highly Integrated GaN Circuits. (Industry Forum); 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe), 2019.
75. Waltereit, P.; Reiner, R.; Moench, S.; Müller, S.; Czap, H.; Dammann, M.; Kirste, L.; Quay, R. Monolithic GaN Power Circuits for Highly-Efficient, Fast-Switching Converter Applications with Higher Functionality. 13th International Conference on Nitride Semiconductors 2019 (ICNS-13) [Online] 2019.
76. Reiner; P. Waltereit; S. Moench; M. Dammann; B. Weiss; R. Quay; O. Ambacher. Multi-Stage Cascode in High-Voltage AlGaN/GaN-on-Si Technology. In 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2018; pp 237–241. DOI: 10.1109/WiPDA.2018.8569168.
77. Reiner, R.; Waltereit, P.; Weiss, B.; Moench, S.; Wespel, M.; Müller, S.; Quay, R.; Ambacher, O. Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology. IET Power Electronics 2018, 11 (4), 681–688. DOI: 10.1049/iet-pel.2017.0397.
78. Waltereit, P.; Reiner, R.; Weiss, B.; Moench, S.; Müller, S.; Czap, H.; Wespel, M.; Dammann, M.; Kirste, L.; Quay, R. Monolithic GaN power circuits for highly-efficient, fast-switching converter applications with higher functionality; 9th Wide Band Gap Semiconductor and Components Workshop: Harwell, United Kingdom, 2018.
79. Reiner, R.; Waltereit, P.; Weiss, B.; Moench, S.; Quay, R.; Ambacher, O. Monolithically Integrated GaN-on-Si Power Circuits. In Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials; The Japan Society of Applied Physics, 2017 - 2017. DOI: 10.7567/SSDM.2017.N-3-01.
80. Hillenbrand, P.; Beltle, M.; Tenbohlen, S.; Monch, S. Sensitivity analysis of behavioral MOSFET models in transient EMC simulation. In 2017 International Symposium on Electromagnetic Compatibility - EMC Europe, 4-7 Sept. 2017; IEEE: Piscataway, NJ, 2017; pp 1–6. DOI: 10.1109/EMCEurope.2017.8094762.
81. Zehelein, M.; Moench, S.; Costa, M. S.; Barner, A.; Roth-Stielow, J. Control strategy for a parallel active buffer circuit in a single-phase-inverter. In Active thermal balancing for modular multilevel converters in HVDC applications; Hahn, F., Buticchi, G., Liserre, M., Eds.; IEEE: Piscataway Township, NJ, USA, 2016; pp 1–10. DOI: 10.1109/EPE.2016.7695359.
82. Reiner, R.; Moench, S.; Waltereit, P.; Basler, M.; Müller, S.; Mikulla, M.; Quay, R. GaN-HEMT with a Back-Gated Segment for High Voltage Cascodes. 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD); pp 227–230. DOI: 10.1109/ISPSD57135.2023.10147630.
83. Salcines, C.; Moench, S.; Spudic, B.; Kallfass, I. C-V characterization technique for four-terminal GaN-on-Si HEMTs based on 3-port S-parameter measurements. 10th International Conference on Integrated Power Electronics Systems (CIPS 2018) [Online], 111–115.

Press releases

84. Fraunhofer IAF (10.06.2024): 1200-V-GaN-HEMTs für die Energiewende. Online verfügbar unter https://www.iaf.fraunhofer.de/de/medien/pressemitteilungen/1200-v-gan-hemts-energiewende.html.
85. Fraunhofer IAF (20.07.2023): Leistungselektronik für neuartige Wärmepumpen erzielt Wirkungsgrad von über 99,7 Prozent. Online verfügbar unter https://www.iaf.fraunhofer.de/de/medien/pressemitteilungen/leistungselektronik-im-projekt-elkawe.html.
86. Fraunhofer IAF (16.06.2021): GaN Niedervolt-Designs ermöglichen kompakten 3-Phasen Motorinverter IC. Online verfügbar unter https://www.iaf.fraunhofer.de/de/medien/pressemitteilungen/gan-niedervolt-ics.html.
87. Fraunhofer IAF (06.07.2020): Leiterplattenintegrierte GaN-auf-Si-Halbbrückenschaltungen für modularen Einsatz. Online verfügbar unter https://www.iaf.fraunhofer.de/de/medien/pressemitteilungen/PCIM.html.
88. Fraunhofer IAF (06.05.2019): Alles auf einem Chip: GaN Power ICs mit integrierter Sensorik. Online verfügbar unter https://www.iaf.fraunhofer.de/de/medien/pressemitteilungen/GaNIAL.html.

Talks

89. Mönch, Stefan (2023): Integration, packaging and development methods for GaN power ICs. (invited talk: GaNius Summer School" im DFG Priority Program “Energy Efficient Power Electronics – GaNius”), 12.09.2023.
90. Moench, Stefan; Reiner, Richard; Waltereit, Patrick; Basler, Michael; Quay, Rüdiger; Bach, David et al. (2023): How highly-efficient power electronics transfers high electrocaloric material performance to heat pump systems. (Presentation). In: 2023 MRS Spring Meeting.
91. Mönch, Stefan (2023): GaN Power Electronics - Technologies, Integration and Applications. (Invited Talk - Seminarreihe Erneuerbare Energien an der Hochschule Karlsruhe). Online verfügbar unter https://www.youtube.com/watch?v=WUYfMhfOpTU.
92. Moench, Stefan (2022): How electrocaloric heat pumps are most efficient - Palo Alto Research Center (PARC) Seminar. (Invited Talk). PARC Seminar, 04.11.2022.
93. Moench, Stefan (2022): GaN Power ICs: Advantages, technology and integration. (Invited Talk). Huawei Workshop, 30.09.2022.
94. Moench, S. (2021): GaN Leistungshalbleiter - Vorteile, Technologien, Integration. (Invited Talk). 9. Kooperationsforum mit Fachausstellung: Leistungselektronik, Bayern Innovativ, 01.12.2021.
95. Moench, S. (2021): Integration of GaN-on-Si Power Converter Topologies, Circuits, and Sensors. (Invited Talk). Compound Semiconductor Week 2021, 10.05.2021.
96. Moench, Stefan (2019): Next-Generation Power Electronics by Advanced Semiconductor and Device Technologies. (Fachforum). PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 07.05.2019.
97. Moench, Stefan (2017): Measurement and Switching in Sub-Nanoseconds with 600 V GaN HEMTs. (Invited Talk). Tektronix AE University 2017. Beaverton, OR (USA), 25.07.2017.

Others

98. Mönch, Stefan (2024): Energy recovery for highly-capacitive cycles by efficient power electronics, exemplified for electrocaloric loads (presentation and poster). EuroEAP 2024. Stuttgart, 11.06.2024.
99. Moench, Stefan (2022): Niedervoltleistungselektronik für eine emissionsfreie Zukunft (Low-voltage power electronics for an emission-free future). In: Jahresbericht - Annual Report 2021 / 2022 (Inventing a Green Future), Fraunhofer IAF, S. 28–31.
100. Moench, Stefan; Müller, Stefan; Reiner, Richard; Waltereit, Patrick; Czap, Heiko; Basler, Michael et al. (2021): Cover Picture: Monolithic Integrated AlGaN/GaN Power Converter Topologies on High-Voltage AlN/GaN Superlattice Buffer. In: Status Solidi A 218 (3), S. 2170014. DOI: 10.1002/pssa.202170014

Sommersemester: Einführung in die Elektrotechnik TKYB, VING, LRT, Vorlesung (371103210)

Wintersemester: Elektromechanische Grundlagen der Medizintechnik - Elektrotechnik, Vorlesung (371104110)

Dr.-Ing. Stefan Mönch startet im Dezember 2023 als Juniorprofessor an der Universität Stuttgart und baut die Forschungsgruppe "Smarte Converter für eine emissionsfreie Mobilität der Zukunft" am Institut für Elektrische Energiewandlung IEW auf.

Er hat 2021 zu Galliumnitrid-basierten und integrierten Leistungshalbleiter-Schaltungen promoviert und ist seitdem als Wissenschaftler und Projektleiter am Fraunhofer-Institut für Angewandte Festkörperphysik IAF in Freiburg tätig, wo er weiterhin für die effiziente elektrische Ansteuerung elektrokalorischer Wärmepumpen im Fraunhofer-Leitprojekt »ElKaWe« tätig ist und als Projektkoordinator das BMWK-Projekt »GaN4EmoBiL« zu 1200-V-GaN-Leistungshalbleitern für Elektromobilität und Systemintegration durch bidirektionales Laden leitet.

Bis 2017 war er akademischer Mitarbeiter am Institut für Robuste Leistungshalbleitersysteme ILH im Bereich schnellschaltender GaN- und SiC-Leistungselektronik an der Universität Stuttgart, wo er zuvor auch seinen Bachelor und Master in Elektro- und Informationstechnik mit Schwerpunkt auf Leistungselektronik und Mikroelektronik absolviert hatte.

Zu seinen wissenschaftlichen Errungenschaften zählen hocheffiziente Spannungswandler und Topologien mit über 99 % Wirkungsgrad, Erkenntnisse zum Einfluss des leitfähigen Siliziumsubstrates auf das Schaltverhaltens von GaN-on-Si Power ICs, schnellschaltende Gate-Treiber und Halbbrückenschaltungen mit Sub-Nanosekunden Schaltflanken ebenso wie der Funktionsnachweis voll-integrierter GaN-Leistungswandler-Topologien auf einem Chip.

Dr.-Ing. Stefan Mönch hat bereits zahlreiche studentische Abschlussarbeiten betreut und ist von über 60 Publikationen bei etwa 30 Hauptautor. Er hält regelmäßig Vorträge auf internationalen Veranstaltungen und ist im technischen Programmkomitee des diesjährigen IEEE Workshops zu Wide-Bandgap Leistungsbauelementen und Anwendungen.

Neben den ausgeschriebenen Themen ist jederzeit auch die individuelle Vergabe von Themen im Bereich der Forschungsgruppe für studentische Arbeiten möglich.

Bitte senden Sie mir dazu eine aussagekräftige Bewerbung (inklusive Leistungsnachweis aus Bachelor/Master und Lebenslauf) per E-Mail zu.

Projekte an der Universität Stuttgart:

HiPower 5.0 - HORIZON-JU-RIA - HORIZON JU Research and Innovation Actions (2025 - 2028)

COOLPOL (Cooling with electrocaloric polymers) - EU EIC Pathfinder Challenge: Clean and efficient cooling (2024 - 2028)

SmartEnergyConversion (Smarte Energiewandler für eine emissionsfreie Mobilität der Zukunft) - LAB19 - InnovationsCampus Mobilität der Zukunft (ICM) (2024)

COOLab (Elektrokalorische Miniatur-Wärmepumpe als mobiles Innovationslabor) - DEMO14 - InnovationsCampus Mobilität der Zukunft (ICM) (2024)

Projekte am Fraunhofer-Institut für Angewandte Festkörperphysik IAF:

ECO-KÜHL - Elektrokalorik - zur umweltfreundlichen und effizienten Kühlung - Leistungszentrum Nachhaltigkeit Freiburg (2025 - 2027)

GaN4EmoBiL – GaN-Leistungshalbleiter für Elektromobilität und Systemintegration durch bidirektionales Laden - Bundesministerium für Wirtschaft und Klimaschutz (BMWK) (2023 - 2026)

Elektrokalorische Wärmepumpen (ElKaWe) - Fraunhofer Leitprojekt (2019 - 2024)

Juniorprofessor und vier akademische Mitarbeitende (Stand: Juli 2025)

Studierende (studentische Arbeiten und Hilfskräfte)

2025:

2024: